CONDENSED MATTER THEORY GROUP

DR. DAMIEN CARTER

Postdoctoral fellow at the Applied and Plasma Physics Group

CONTACT DETAILS

School of Physics A28, Room 433A
The University of Sydney, Australia
Phone: +61 2 9036 9085
Fax: +61 2 935 17726
Email: carter@physics.usyd.edu.au

 

RESEARCH INTERESTS

Properties and doping of wide III-Nitride nanostructures.

CODES

RECENT PUBLICATIONS

  1. D.J. Carter, A.L. Rohl, J.D. Gale, A.M. Fogg, R.L. Gurney, and B. Kahr. Adsorption energetics of potassium sulfate dye inclusion crystals. J. Mol. Struct. 647,  65-73 (2003). [ Reprint download: pdf ]
  2. D.J. Carter, M.I. Ogden, and A.L. Rohl. Incorporation of Cyano Transition Metal Complexes in KCl crystals - Experimental and Computational Studies. Aust. J. Chem. 56, 675-678 (2003). [ Reprint download: pdf ]
  3. D.J. Carter, A.L. Rohl and J.D. Gale. Ab Initio Simulations of the (101) Surfaces of Potassium Dihydrogenphosphate (KDP) . J. Chem. Theory Comput, 2, 797-800 (2006). [ Reprint download: pdf ]
  4. D. J. Carter, J. D. Gale, B. Delley, and C. Stampfl, Geometry and diameter dependence of the electronic and physical properties of Gallium Nitride nanowires from first principles, Phys. Rev. B 77, 115349 (2008) [ Reprint download: pdf ]
  5. D. J. Carter and C. Stampfl, Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles, Phys. Rev. B 79, 195302 (2009)
  6. C. Stampfl and D. Carter, Book Chapter, Gallium Nitride Nanowires, In the Handbook of Nanophysics. Volume 4, Nanotubes and Nanowires. Editor K. D. Sattler, Taylor & Francis, Published 16th September 2010 by CRC Press.
  7. D. Carter, M. Puckeridge, B. Delley, and C. Stampfl, Quantum confinement effects in gallium nitride nanostructures: ab initio investigations, Nanotechnology 20, 425401 (2009).
  8. X. Y. Cui, D. J. Carter, B. Delley, S. H. Wei, A. J. Freeman, M. Fuchs and C. Stampfl, Continuously tunable bandgap in GaN/AlN (0001) superlattices via built-in electric field, Phys. Rev. B 81, 155301 (2010)
  9. D. J. Carter, M. Fuchs, and C. Stampfl, Vacancies in GaN bulk and nanowires: Effect of self-interaction corrections, submitted to Phys. Rev. B.

 

 

 

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