DR. XIANGMEI DUAN
Postdoctoral fellow at the Applied and Plasma Physics Group
CONTACT DETAILS
School of Physics A28, Room 361
The University of Sydney, Australia
Phone: +61 2 9036 6039
Fax: +61 2 935 17726
Email: duan@physics.usyd.edu.au
RESEARCH INTERESTS
Formation and Effect of Defects Complexes in InN.
CODES
- Quantum-ESPRESSO
- FHI98md+FHI98PP
RECENT PUBLICATIONS
- X.M. Duan, M. Peressi and S. Baroni, Characterization of Si-doped GaAs cross-sectional surfaces via ab initio simulations, Phys. Rev. B 72, 085341 (2005) [ Reprint download: pdf ]
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X.M. Duan, S. Baroni, S. Modesti, and M. Peressi, Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide, Appl. Phys. Lett., 88, 022115 (2006). [ Reprint download: pdf ]
- X. Duan, M. Peressi and S. Baroni, Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images, Phys. Rev. B 75 , 035338 (2007) [ Reprint download: pdf ]
- A. Stroppa, X. Duan, M. Peressi D. Furlanetto and S. Modesti, Computational and experimental imaging of Mn defects on GaAs(110) cross-sectional surface, Phys. Rev. B 75, 195335 (2007) [ Reprint download: pdf ]
- X. M. Duan and C. Stampfl, Nitrogen vacancies in InN: Vacancy clustering and metallic bond-like formation from first-principles, Phys. Rev. B, 77, 115207 (2008). [ Reprint download: pdf ]
- X. M. Duan and C. Stampfl, Vacancies and interstitials in Indium Nitride: Vacancy clustering and molecular bond-like formation from first-principles, Phys. Rev. B 79, 174202 (2009)
- X. M. Duan and C. Stampfl, Complexes and cluster doping of InN: First-principles investigations Phys. Rev. B 79, 035207 (2009)
- X. M. Duan and C. Stampfl, M. M. M. Bilek, and D. R. McKenzie, Co-doping of aluminium and gallium with nitrogen in ZnO: A comparative first-principles investigation, Phys. Rev. B 79, 235208 (2009)
- X. M. Duan, O. Warschkow, A. Soon, B. Delley, and C. Stampfl, A Density Functional Study of Oxygen on Cu(100) and Cu(110) Surfaces, submitted to Phys. Rev. B.
